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Czochralski silicon detectors irradiated with and 10 MeV protons

✍ Scribed by E. Tuovinen; J. Härkönen; P. Luukka; E. Tuominen; E. Verbitskaya; V. Eremin; I. Ilyashenko; A. Pirojenko; I. Riihimäki; A. Virtanen; K. Leinonen


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
197 KB
Volume
568
Category
Article
ISSN
0168-9002

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The Hecht model describes the charge collection efficiency of semiconductor detectors using the mean free path of the charge carriers. While the fits to data are very good for non-irradiated detectors, modifications to the model are necessary to take into account the structural changes in the detect