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Radiation effects on silicon bipolar transistors caused by 3–10 MeV protons and 20–60 MeV bromine ions

✍ Scribed by Xingji Li; Hongbin Geng; Mujie Lan; Chaoming Liu; Dezhuang Yang; Shiyu He

Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 369 KB
Volume: 405
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2009.12.027

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