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An analysis of 100 MeV F8+ ion and 50 MeV Li3+ ion irradiation effects on silicon NPN rf power transistors

โœ Scribed by N. Pushpa; K.C. Praveen; A.P. Gnana Prakash; Y.P. Prabhakara Rao; Ambuj Tripati; D. Revannasiddaiah

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
778 KB
Volume
620
Category
Article
ISSN
0168-9002

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Effect of 50 MeV Li3+ ion irradiati
Effect of 50 MeV Li3+ ion irradiation on electrical characteristics of high speed NPN power transistor
โœ C.M. Dinesh; Ramani; M.C. Radhakrishna; R.N. Dutt; S.A. Khan; D. Kanjilal ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 192 KB

Silicon NPN overlay RF power high speed commercial bipolar junction transistors (BJTs) find applications in military, space and communication equipments. Here we report the effect of 50 MeV Li 3+ ion irradiation in the fluence range 1 ร‚ 10 11 -1.8 ร‚ 10 12 ions cm ร€2 on NPN power transistor. The rang