Silicon microstrip detector irradiation using a 26 MeV proton beam
✍ Scribed by S. Albergo; M. Chiorboli; C. Civinini; R. D’Alessandro; A. Macchiolo; C. Marchettini; M. Meschini; R. Potenza; A. Rovelli; A. Tricomi
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 263 KB
- Volume
- 583
- Category
- Article
- ISSN
- 0168-9002
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The behaviour of the leakage current, interstrip resistance and capacitance have been studied on silicon microstrip detectors during an annealing period equivalent to C10 8 min at room temperature, after 34 MeV proton irradiation. A comparison between samples of the same geometry built on /1 0 0S an
On an incident of accelerator beam loss, the tracking detector located close to the beam line is subjected to receive intensive radiation in a short period. We used a 1-W focused Nd : YAG laser and simulated the effects on the ATLAS microstrip detector. The laser corresponds to intensity of up to 1