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Cylindrical surrounding-gate MOSFETs with electrically induced source/drain extension

โœ Scribed by Cong Li; Yiqi Zhuang; Ru Han


Book ID
104053572
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
929 KB
Volume
42
Category
Article
ISSN
0026-2692

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In this paper, we present the unique features exhibited by a novel double gate MOSFET in which the front gate consists of two side gates as an extension of the source/drain. The asymmetrical side gates are used to induce extremely shallow source/drain regions on either side of the main gate. Using t