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[IEEE 2011 3rd International Conference on Electronics Computer Technology (ICECT) - Kanyakumari, India (2011.04.8-2011.04.10)] 2011 3rd International Conference on Electronics Computer Technology - 3D-TCAD simulation study of an electrically induced Source/drain cylindrically surrounding gate MOSFETs for reduced SCEs and HCEs

✍ Scribed by Gupta, Santosh Kumar; Baishya, Srimanta

Book ID: 111937380
Publisher: IEEE
Year: 2011
Weight: 229 KB
Volume: 0
Category: Article
ISBN: 1424486785
DOI: 10.1109/icectech.2011.5941732

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