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50 nm MOSFET with electrically induced source/drain (S/D) extensions

โœ Scribed by Sangyeon Han; Sung-Il Chang; Jongho Lee; Hyungcheol Shin

Book ID
114538831
Publisher
IEEE
Year
2001
Tongue
English
Weight
202 KB
Volume
48
Category
Article
ISSN
0018-9383

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A new symmetrical double gate nanoscale
A new symmetrical double gate nanoscale MOSFET with asymmetrical side gates for electrically induced source/drain
โœ Ali A. Orouji; M. Jagadesh Kumar ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 216 KB

In this paper, we present the unique features exhibited by a novel double gate MOSFET in which the front gate consists of two side gates as an extension of the source/drain. The asymmetrical side gates are used to induce extremely shallow source/drain regions on either side of the main gate. Using t