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A new 50-nm nMOSFET with side-gates for virtual source-drain extensions

โœ Scribed by Young Jin Choi; Byung Yong Choi; Kyung Rok Kim; Jong duk Lee; Byung-Gook Park

Book ID
114616870
Publisher
IEEE
Year
2002
Tongue
English
Weight
246 KB
Volume
49
Category
Article
ISSN
0018-9383

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โœ Ali A. Orouji; M. Jagadesh Kumar ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 216 KB

In this paper, we present the unique features exhibited by a novel double gate MOSFET in which the front gate consists of two side gates as an extension of the source/drain. The asymmetrical side gates are used to induce extremely shallow source/drain regions on either side of the main gate. Using t