Electro-absorption modulator using a typ
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C. Lugand; T. Benyattou; G. Guillot; T. Venet; M. Gendry; G. Hollinger
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Article
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1998
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Elsevier Science
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English
⚖ 107 KB
In this paper photoluminescence measurements at low temperature under different excitation powers were carried out on an InGaAs tensile strained (x = 0.3) quantum well with InGaAs barriers lattice matched (LM) to InP. Evidence of a type-II recombination was found between carriers confined in the ten