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Currents and current gain analysis of passivated heterojunction bipolar transistors (HBT)

โœ Scribed by Zebda, Y.; Qasaimeh, O.

Book ID
114535940
Publisher
IEEE
Year
1994
Tongue
English
Weight
646 KB
Volume
41
Category
Article
ISSN
0018-9383

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InGaN/GaN double heterojunction bipolar Npn transistors have been fabricated using p-type InGaN and n-type GaN as base and collector layers, respectively. The structures were grown on SiC substrates by low-pressure metalorganic vapor phase epitaxy. The In mole fraction in the base layer and its thic