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Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

✍ Scribed by Junqin Zhang, 张军琴; Yintang Yang, 杨银堂; Lifei Lou, 娄利飞; Yan Zhao, 刘莉

Book ID
115368197
Publisher
Optics InfoBase
Year
2008
Tongue
English
Weight
652 KB
Volume
6
Category
Article
ISSN
1671-7694

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📜 SIMILAR VOLUMES

Investigation of the dark electrical cha
Investigation of the dark electrical characteristics of the lateral metal–semiconductor–metal photodetectors using two-dimensional numerical simulation
✍ Nacer Debbar 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 460 KB

## Abstract A detailed investigation of the dark electrical characteristics of the lateral metal–semiconductor–metal (MSM) structures is carried out using a two‐dimensional numerical simulation based on the drift‐diffusion model. The model includes image force barrier lowering and current‐dependent