4H-SiC vertical double implanted metal–oxide–semiconductor drift region—energy aspects of its formation and analysis

✍ Scribed by Alkhem, Abdel; Šašić, Rajko M; Lukić, Petar M; Ostojić, Stanko M

• Book ID: 125521448
• Publisher: Royal Swedish Academy of Sciences
• Year: 2013
• Tongue: English
• Weight: 409 KB
• Volume: 89
• Category: Article
• ISSN: 0031-8949
• DOI: 10.1088/0031-8949/89/01/015803