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Current-voltage characteristics of Al/SiO2/p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness

✍ Scribed by M. I. Vexler; S. E. Tyaginov; A. F. Shulekin; I. V. Grekhov


Book ID
111443619
Publisher
Springer
Year
2006
Tongue
English
Weight
245 KB
Volume
40
Category
Article
ISSN
1063-7826

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