On the intersecting behaviour of experimental forward bias current–voltage ( I – V ) characteristics of Al/SiO 2 /p-Si (MIS) Schottky diodes at low temperatures

✍ Scribed by Dökme, Ïlbilge; Altindal, Şemsettin

• Book ID: 121231381
• Publisher: Institute of Physics
• Year: 2006
• Tongue: English
• Weight: 296 KB
• Volume: 21
• Category: Article
• ISSN: 0268-1242
• DOI: 10.1088/0268-1242/21/8/012