Current-voltage, capacitance-voltage, and capacitance-temperature measurements on CdS/CuInSe2 solar cells

✍ Scribed by N. Christoforou; J.D. Leslie; S. Damaskinos

• Publisher: Elsevier Science
• Year: 1989
• Weight: 613 KB
• Volume: 26
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(89)90082-3

✦ Synopsis

This paper reports on current-voltage, capacitance-voltage, and capacitance-temperature measurements on 9% efficient CdS/CuInSe2 solar cells. Previous deep level transient spectroscopy (DLTS) measurements on the same samples have shown two traps in the CuInSe2, namely a majority carrier (hole) trap whose activation energy is distributed over the range 0.65 -0.75 eV from the valence band edge and a minority carrier (electron) trap with a sharply defined activation energy of 0.35 eV from the conduction band edge. (N. Christoforou, J. D. Leslie and S. Damaskinos, Sol. Cells, 26 (3) (1989) 197.) There is strong evidence from the measurements reported here that there are additional hole traps (deep acceptor states} in the CuInSe2 close to the interface with the CdS, which do not participate in the DLTS measurements. Other possible interpretations in terms of a heavily doped p layer in the CuInSe2 close to the CdS interface or shallow, fast-acting traps are shown not to agree with all the experimental results.