✦ LIBER ✦

Current status of GaN-based multiple quantum well laser diodes

✍ Scribed by Watanabe, H. ;Umezaki, T. ;Minoura, J. ;Ohashi, M. ;Arazoe, N. ;Nakamura, R. ;Hatano, T. ;Sonoyama, T. ;Watanabe, Y. ;Okawachi, M. ;Iwayama, S.

Publisher: John Wiley and Sons
Year: 2004
Tongue: English
Weight: 74 KB
Volume: 201
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200405041

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Simulation of InGaN violet and ultraviol

Simulation of InGaN violet and ultraviolet multiple-quantum-well laser diodes

✍ Sheng-Horng Yen; Bo-Jean Chen; Yen-Kuang Kuo 📂 Article 📅 2006 🏛 Springer 🌐 English ⚖ 171 KB

Deep-level transient spectroscopy studie

Deep-level transient spectroscopy studies of light-emitting diodes based on multiple-quantum-well InGaN/GaN structure

✍ Mikhail M. Sobolev; Natalia M. Shmidt 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 227 KB

Recombination Dynamics in InxGa1—xN Mult

Recombination Dynamics in InxGa1—xN Multiple-Quantum-Well Based Laser Diodes under High Photoexcitation

✍ Narukawa, Y. ;Kawakami, Y. ;Fujita, Sg. ;Nakamura, S. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 197 KB 👁 2 views

Microstructural study of quantum well de

Microstructural study of quantum well degradation in ZnSe-based laser diodes

✍ E. Roventa; R. Kröger; M. Klude; A. Ueta; G. Alexe; P. Ryder; D. Hommel 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 245 KB

Analysis of Gain Saturation Behavior in

Analysis of Gain Saturation Behavior in GaN Based Quantum Well Lasers

✍ M. Vehse; J. Meinertz; O. Lange; P. Michler; J. Gutowski; S. Bader; A. Lell; V. 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 185 KB

Spectra and Quantum Efficiency of Light-

Spectra and Quantum Efficiency of Light-Emitting Diodes Based on GaN Heterostructures with Quantum Wells

✍ Yunovich, A. E. ;Kudryashov, V. E. ;Mamakin, S. S. ;Turkin, A. N. ;Kovalev, A. N 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 237 KB 👁 2 views

Spectra and quantum efficiency h e of green LEDs based on heterostructures InGaN/AlGaN/GaN with multiple quantum wells were studied at currents J = 10 ± ±6 to 10 ± ±1 A. Minor differences in h e (of AE10% at J % 10 mA) are caused by sufficiently different distributions of effective charges in the sp