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Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation

✍ Scribed by Alexewicz, A.; Alomari, M.; Maier, D.; Behmenburg, H.; Giesen, C.; Heuken, M.; Pogany, D.; Kohn, E.; Strasser, G.

Book ID: 121351239
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 493 KB
Volume: 89
Category: Article
ISSN: 0038-1101
DOI: 10.1016/j.sse.2013.09.001

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