✦ LIBER ✦
Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics
✍ Scribed by Abermann, S.; Pozzovivo, G.; Kuzmik, J.; Ostermaier, C.; Henkel, C.; Bethge, O.; Strasser, G.; Pogany, D.; Carlin, J.-F.; Grandjean, N.; Bertagnolli, E.
- Book ID
- 120328950
- Publisher
- The Institution of Electrical Engineers
- Year
- 2009
- Tongue
- English
- Weight
- 230 KB
- Volume
- 45
- Category
- Article
- ISSN
- 0013-5194
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