Cu(In,Ga)Se2Thin Film Preparation from a Cu(In,Ga) Metallic Alloy and Se Nanoparticles by an Intense Pulsed Light Technique
โ Scribed by Sanjay R. Dhage; Hak-Sung Kim; H. Thomas Hahn
- Book ID
- 107457089
- Publisher
- Springer US
- Year
- 2010
- Tongue
- English
- Weight
- 428 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0361-5235
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## Abstract Cu(In,Ga) (S,Se)~2~ thin films were fabricated by sequential evaporation from CuGaSe~2~, CuInSe~2~ and In~2~S~3~ compounds for photovoltaic device applications. From XRF analysis, the Cu:(In + Ga):(S + Se) atomic ratio in all thin films was approximately 1:1:2. As the [In~2~S~3~]/([CuGa
Thin-film photovoltaic devices based upon the Cu(In,Ga)Se 2 material system continue to advance with total-area cell efficiencies approaching 16%. Fabrication processes have been developed that may easily be transferred to industrial scale systems. Device designs incorporating variable-band-gap abso