## Abstract Cu(In,Ga) (S,Se)~2~ thin films were fabricated by sequential evaporation from CuGaSe~2~, CuInSe~2~ and In~2~S~3~ compounds for photovoltaic device applications. From XRF analysis, the Cu:(In + Ga):(S + Se) atomic ratio in all thin films was approximately 1:1:2. As the [In~2~S~3~]/([CuGa
β¦ LIBER β¦
Preparation of Cu(In,Ga)(S,Se)2 thin films by sequential evaporation and annealing in sulfur atmosphere
β Scribed by Toshiyuki Yamaguchi; Yasutaka Asai; Naoyuki Oku; Shigetoshi Niiyama; Toshito Imanishi; Shigeyuki Nakamura
- Book ID
- 108265643
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 185 KB
- Volume
- 95
- Category
- Article
- ISSN
- 0927-0248
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