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Preparation of Cu(In,Ga)(S,Se)2 thin films by sequential evaporation and annealing in sulfur atmosphere

✍ Scribed by Toshiyuki Yamaguchi; Yasutaka Asai; Naoyuki Oku; Shigetoshi Niiyama; Toshito Imanishi; Shigeyuki Nakamura


Book ID
108265643
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
185 KB
Volume
95
Category
Article
ISSN
0927-0248

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## Abstract Cu(In,Ga) (S,Se)~2~ thin films were fabricated by sequential evaporation from CuGaSe~2~, CuInSe~2~ and In~2~S~3~ compounds for photovoltaic device applications. From XRF analysis, the Cu:(In + Ga):(S + Se) atomic ratio in all thin films was approximately 1:1:2. As the [In~2~S~3~]/([CuGa

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## Polycrystalline thin films of y-I&Se, were obtained by sequentially evaporating In and Se on glass substrates followed by an annealing in flowing argon. The obtained films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and microprobe analysis