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Crystallization properties of Ge 2 Bi 2 Te 5 and Ge 10 Sb 90 amorphous nanoparticles subjected to pulsed laser irradiation

✍ Scribed by Mihara, Takashi; Kojima, Rie; Tsuchino, Akio; Sato, Shuji; Hisada, Kazuya; Furumiya, Shigeru; Yamada, Noboru

Book ID: 126773100
Publisher: Institute of Pure and Applied Physics
Year: 2014
Tongue: English
Weight: 512 KB
Volume: 7
Category: Article
ISSN: 1882-0778
DOI: 10.7567/apex.7.055001

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## Abstract Amorphous thin films of SnSe~2~ and Ge~2~Sb~2~Te~5~ doped by different amount of silver (0.1, 0.2, 0.5 and 1 Ag atoms per formula unit) have been prepared by pulsed laser deposition (PLD) starting from solid polycrystalline targets. The films were investigated by X‐ray diffraction (XRD)