Amorphous Ge 30 Sb 10 Se 60 chalcogenide thin films were prepared onto cleaned glass substrates using thermal evaporation technique. The structure of the as-prepared films was confirmed to be amorphous using X-ray diffraction. The optical absorption coefficient (a) for the as-deposited films was cal
โฆ LIBER โฆ
Crystallization ability and optical and electrical properties of Ge10(Se-Te)90and Ge30(Se-Te)70chalcogenide glassy semiconductors
โ Scribed by S. A. Grudinkin; V. I. Baharev; V. M. Egorov; B. T. Melekh; V. G. Golubev
- Book ID
- 111445073
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 159 KB
- Volume
- 45
- Category
- Article
- ISSN
- 1063-7826
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The results are presented of a study of the electrical and optical properties of vacuum evaporated amorphous thin films in the Ge0S0Se system. The effect of Te isoelectronic substitution either completely for S to give Ge 2.5 Te 2.5 Se 95 and Ge 5 Te 5 Se 90 or partially for Se to yield Ge 2.