𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Crystal structure refinement of AlN and GaN

✍ Scribed by Heinz Schulz; K.H. Thiemann


Book ID
107854119
Publisher
Elsevier Science
Year
1977
Tongue
English
Weight
298 KB
Volume
23
Category
Article
ISSN
0038-1098

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Investigation of GaN crystal quality on
✍ Gwo-Mei Wu; Chen-Wen Tsai; Nie-Chuan Chen; Pen-Hsiu Chang πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 220 KB πŸ‘ 1 views

## Abstract The crystal quality of GaN thin film on silicon using GaN/AlN superlattice structures was investigated. The growth was carried out on Si(111) for GaN(0001) in a metal‐organic vapor phase epitaxy system. Various GaN/AlN superlattice intermediate layers have been designed to decrease the

Quasiparticle band structure of AlN and
✍ Rubio, Angel; Corkill, Jennifer L.; Cohen, Marvin L.; Shirley, Eric L.; Louie, S πŸ“‚ Article πŸ“… 1993 πŸ› The American Physical Society 🌐 English βš– 357 KB
Strain accommodation and interfacial str
✍ G. P. Dimitrakopulos; E. Kalesaki; Ph. Komninou; Th. Kehagias; J. Kioseoglou; Th πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 923 KB

## Abstract The strain accommodation mechanisms at AlN interlayers in GaN, grown by radio‐frequency plasma assisted molecular beam epitaxy, are studied using transmission electron microscopy techniques and atomistic modelling. Interlayers of various thicknesses grown within GaN epilayers deposited