## Abstract The crystal quality of GaN thin film on silicon using GaN/AlN superlattice structures was investigated. The growth was carried out on Si(111) for GaN(0001) in a metalβorganic vapor phase epitaxy system. Various GaN/AlN superlattice intermediate layers have been designed to decrease the
β¦ LIBER β¦
Crystal structure refinement of AlN and GaN
β Scribed by Heinz Schulz; K.H. Thiemann
- Book ID
- 107854119
- Publisher
- Elsevier Science
- Year
- 1977
- Tongue
- English
- Weight
- 298 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0038-1098
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## Abstract The strain accommodation mechanisms at AlN interlayers in GaN, grown by radioβfrequency plasma assisted molecular beam epitaxy, are studied using transmission electron microscopy techniques and atomistic modelling. Interlayers of various thicknesses grown within GaN epilayers deposited