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Electron energy structure and X-ray spectra of wide-band GaN, AlN, and AlN-GaN semiconductors

✍ Scribed by V. V. Ilyasov; T. P. Zhdanova; I. Ya. Nikiforov


Book ID
106427334
Publisher
SP MAIK Nauka/Interperiodica
Year
2007
Tongue
English
Weight
222 KB
Volume
48
Category
Article
ISSN
0022-4766

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## Abstract Nanosecond‐pulsed current–voltage measurements were used to study hot‐electron transport in undoped AlGaN/GaN and AlGaN/AlN/GaN two‐dimensional electron gas channels biased up to 200 kV/cm. Voltage pulses of 1 ns were applied in order to minimize channel heating. The current saturated a