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Crystal imperfections in silicon epitaxial layers grown on ion-implanted substrates

โœ Scribed by J. F. C. Baker; R. Ogden

Publisher
Springer
Year
1975
Tongue
English
Weight
674 KB
Volume
10
Category
Article
ISSN
0022-2461

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Infrared reflectance analysis of GaN epi
Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates
โœ Z.C. Feng; T.R. Yang; Y.T. Hou ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 282 KB

Infrared reflectance (IR) of GaN grown on sapphire and silicon substrates has been studied both theoretically and experimentally. The theoretical calculation of the IR spectra is based on the transfer matrix method. The IR spectral characteristics influenced by several factors, such as film thicknes