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Crystal Growth, Properties and Applications Volume 5, Silicon

✍ Scribed by J. Grabmaier


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
58 KB
Volume
17
Category
Article
ISSN
0232-1300

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Peculiarities of Silicon Carbide Crystal
✍ Dr. S. K. Lilov πŸ“‚ Article πŸ“… 1993 πŸ› John Wiley and Sons 🌐 English βš– 309 KB

On the basis of the accomplished investigation is has been shown that in the known schemes for growing of Sic epitaxial layers from the gas phase in quasiclosed volume it takes place an excretion of the redundant silicon upon the front of crystallization, its accumulation in the gas phase up to the