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Crystal growth and thermal and optical properties of La3Ga5SiO14single crystals

✍ Scribed by Z. Wang; D. Yuan; L. Pan; X. Cheng; Y. Lv; X. Wang; S. Guo; X. Duan; J. Wang; D. Xu; M. Lv

Publisher
Springer
Year
2003
Tongue
English
Weight
280 KB
Volume
77
Category
Article
ISSN
1432-0630

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Crystal growth and spectroscopic properties of Ho: La3Ga5SiO14 single crystals
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Single crystals of Holmium (Ho) doped La 3 Ga 5 SiO 14 were grown along c-axis by using the Czochralski method. The structure of the crystal was studied by X-ray powder diffraction (XRPD) and found the crystal structure still belonged to the space group P321. The unitcell parameters were calculated

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## Abstract High optical quality La~3~Ga~5~SiO~14~ (abbreviated as LGS):Tm single crystals with dopant concentrations of 1 at% Tm^3+^ ions were grown by the Czochralski method. The absorption spectrum and fluorescence spectrum of LGS:Tm crystals were measured at room temperature. Based on Judd–Ofel

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## Abstract The absorption and fluorescence spectra of Dy^3+^‐doped La~3~Ga~5~SiO~14~ (LGS) crystals were measured and analyzed according to the Judd–Ofelt theory. When applied, the following spectral parameters have been obtained: phenomenological intensity parameters __Ξ©__~__t__~, __Ξ©__~2~ = 2.64