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Crystal growth and spectroscopic properties of Ho: La3Ga5SiO14 single crystals

โœ Scribed by Zengmei Wang; Duorong Yuan; Yansheng Yin; Ge Su


Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
232 KB
Volume
29
Category
Article
ISSN
0925-3467

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โœฆ Synopsis


Single crystals of Holmium (Ho) doped La 3 Ga 5 SiO 14 were grown along c-axis by using the Czochralski method. The structure of the crystal was studied by X-ray powder diffraction (XRPD) and found the crystal structure still belonged to the space group P321. The unitcell parameters were calculated to be a = 0.8187 ยฑ 0.0008 nm, c = 0.5103 ยฑ 0.0006 nm and V = 0.296 nm 3 . The absorption spectrum and fluorescence spectrum of Ho 3+ : La 3 Ga 5 SiO 14 crystal were measured at room temperature. Three emission transitions occurred at 547, 656.5 and 755.5 nm, with emission transitions ( 5 S 2 ! 5 I 8 ) at 547 nm more intense than others.


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