Czochralski growth and characterization of Dy: La3Ga5.5Nb0.5O14 single crystals
β Scribed by F. P. Yu; D. R. Yuan; X. Zhao; X. L. Duan; S. Y. Guo; X. F. Cheng; X. Q. Wang
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 176 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0232-1300
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β¦ Synopsis
single crystal growth, characterization, La 3 Ga 5.5 Nb 0.5 O 14 , fluorescence decay time. PACS 60.Ki, 81.10.-h Dysprosium (Dy) doped La 3 Ga 5.5 Nb 0.5 O 14 single crystals were grown by the traditional Czochralski method along z-axis. The structure of the crystal has been studied by X-ray powder diffraction method, and the unitcell parameters are calculated to be a=8.22070 Γ , c=5.12533 Γ and V=299.965 Γ 3 . The segregation coefficient of Dy 3+ in La 3 Ga 5.5 Nb 0.5 O 14 crystal was measured by X-ray fluorescence analysis. For 1 mol% doping level in the melt, the distribution coefficient of Dy 3+ was determined to be 0.341 wt%. Specific heat, thermal expansion and transmission spectrum of Dy: La 3 Ga 5.5 Nb 0.5 O 14 single crystals have been measured. The fluorescence spectra of Dy 3+ : La 3 Ga 5.5 Nb 0.5 O 14 crystals were measured at room temperature, and there were four emission transitions occurring at 479, 576, 662 and 754 nm, respectively. The fluorescent lifetimes measurement results show 1.0% Dy: La 3 Ga 5.5 Nb 0.5 O 14 possesses shorter fluorescence decay time (303.4 Β΅s) than does 1.0%Dy:LGS (436.12 Β΅s).
π SIMILAR VOLUMES
## Abstract Transparent semiconducting Ξ²βGa~2~O~3~ single crystals were grown by the Czochralski method from an iridium crucible under a dynamic protective atmosphere to control partial pressures of volatile species of Ga~2~O~3~. Thermodynamic calculations on different atmospheres containing CO~2~,