Device simulation of irradiated silicon
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A. Santocchia; B. MacEvoy; G. Hall; F. Moscatelli; D. Passeri; G.U. Pignatel
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Article
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2004
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Elsevier Science
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English
β 162 KB
Radiation hardness is a critical design constraint for current and future generation silicon detectors, which are foreseen to undergo radiation fluences higher than 1 Γ 10 14 cm Γ2 1-MeV neutron equivalent. Recently, low-temperature operating conditions have been suggested as an effective means to r