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Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures

✍ Scribed by K. Borer; S. Janos; V.G. Palmieri; B. Dezillie; Z. Li; P. Collins; T.O. Niinikoski; C. Lourenço; P. Sonderegger; E. Borchi; M. Bruzzi; S. Pirollo; V. Granata; S. Pagano; S. Chapuy; Z. Dimcovski; E. Grigoriev; W. Bell; S.R.H. Devine; V. O'Shea; K. Smith; P. Berglund; W. de Boer; F. Hauler; S. Heising; L. Jungermann; L. Casagrande; V. Cindro; M. Mikuž; M. Zavartanik; C. da Viá; A. Esposito; I. Konorov; S. Paul; L. Schmitt; S. Buontempo; N. D'Ambrosio; S. Pagano; G. Ruggiero; V. Eremin; E. Verbitskaya

Book ID
108415553
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
318 KB
Volume
440
Category
Article
ISSN
0168-9002

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Radiation hardness is a critical design constraint for current and future generation silicon detectors, which are foreseen to undergo radiation fluences higher than 1 Â 10 14 cm À2 1-MeV neutron equivalent. Recently, low-temperature operating conditions have been suggested as an effective means to r