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Charge collection properties of heavily irradiated epitaxial silicon detectors

✍ Scribed by G. Kramberger; V. Cindro; I. Dolenc; E. Fretwurst; G. Lindström; I. Mandić; M. Mikuž; M. Zavrtanik

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
291 KB
Volume
554
Category
Article
ISSN
0168-9002

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The collected charge in Si detectors irradiated up to the fluences of Super-LHC range (10 16 n eq cm À 2 ) is calculated using an approach of double peak electric field distribution with an active base region. In the calculations the base region located between the space charge regions is considered