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Crucibles for Czochralski growth of isotopically enriched silicon single crystals

โœ Scribed by Gusev, A. V.; Gavva, V. A.; Kozyrev, E. A.; Riemann, H.; Abrosimov, N. V.


Book ID
121337986
Publisher
SP MAIK Nauka/Interperiodica
Year
2013
Tongue
English
Weight
174 KB
Volume
49
Category
Article
ISSN
0020-1685

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Combined effects of crucible geometry an
โœ F. Mokhtari; A. Bouabdallah; M. Zizi; S. Hanchi; A. Alemany ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 944 KB

## Abstract In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation