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Multiple Czochralski growth of silicon crystals from a single crucible

✍ Scribed by R.L. Lane; A.H. Kachare

Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
786 KB
Volume
50
Category
Article
ISSN
0022-0248

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πŸ“œ SIMILAR VOLUMES

Combined effects of crucible geometry an
Combined effects of crucible geometry and Marangoni convection on silicon Czochralski crystal growth
✍ F. Mokhtari; A. Bouabdallah; M. Zizi; S. Hanchi; A. Alemany πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 944 KB

## Abstract In order to understand the influence of crucible geometry combined with natural convection and Marangoni convection on melt flow pattern, temperature and pressure fields in silicon Czochralski crystal growth process, a set of numerical simulations was conducted. We carry out calculation

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Three-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth
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## Abstract The effects of several growth parameters in cylindrical and spherical Czochralski crystal process are studied numerically and particularly, we focus on the influence of the pressure field. We present a set of three‐dimensional computational simulations using the finite volume package Fl