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Cross-sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy

โœ Scribed by Feenstra, R. M.; Yu, E. T.; Woodall, J. M.; Kirchner, P. D.; Lin, C. L.; Pettit, G. D.


Book ID
120236097
Publisher
American Institute of Physics
Year
1992
Tongue
English
Weight
804 KB
Volume
61
Category
Article
ISSN
0003-6951

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Atomic scale characterization of cleaved surfaces of cubic GaN (c-GaN) epilayers was established in real space. Using cross-sectional scanning tunneling microscopy (XSTM), c-GaN epilayers grown on GaAs (001) by low pressure MOVPE were investigated. The analysis of STM observations revealed that the