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Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs

✍ Scribed by Simoen, E.; Mercha, A.; Claeys, C.; Lukyanchikova, N.; Garbar, N.

Book ID: 114617442
Publisher: IEEE
Year: 2004
Tongue: English
Weight: 399 KB
Volume: 51
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2004.828159

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