✦ LIBER ✦

Critical assessment of birefringence imaging of dislocations in 6H silicon carbide

✍ Scribed by Le Thi Mai Hoa; T. Ouisse; D. Chaussende

Book ID: 116630356
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 975 KB
Volume: 354
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.06.009

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Diffusion of Hydrogen in 6H Silicon Carb

Diffusion of Hydrogen in 6H Silicon Carbide

✍ Linnarsson, M. K.; Doyle, J. P.; Svensson, B. G. 📂 Article 📅 1996 🏛 Cambridge University Press ⚖ 335 KB

Charge-state transitions of muonium in 6

Charge-state transitions of muonium in 6H silicon carbide

✍ H.N. Bani-Salameh; A.G. Meyer; B.R. Carroll; R.L. Lichti; Y.G. Celebi; K.H. Chow 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 159 KB

Anisotropy of high-temperature hardness

Anisotropy of high-temperature hardness in 6H silicon carbide

✍ S. Fujita; K. Maeda; S. Hyodo 📂 Article 📅 1986 🏛 Springer 🌐 English ⚖ 268 KB

Luminescence and Absorption of Vanadium

Luminescence and Absorption of Vanadium (V4+): In 6H-Silicon Carbide

✍ Dörnen, Achim; Latushko, Ya.I.; Suttrop, W.; Pensl, Gerhard; Leibenzeder, S.; St 📂 Article 📅 1992 🏛 Trans Tech Publications, Ltd. 🌐 English ⚖ 439 KB

Superscrew dislocations in silicon carbi

Superscrew dislocations in silicon carbide: Dissociation, aggregation, and formation

✍ Ma, Xianyun 📂 Article 📅 2006 🏛 American Institute of Physics 🌐 English ⚖ 676 KB

On the nature of ion implantation induce

On the nature of ion implantation induced dislocation loops in 4H-silicon carbide

✍ Persson, P. O. AÌ.; Hultman, L.; Janson, M. S.; HalleÌn, A.; Yakimova, R.; Pan 📂 Article 📅 2002 🏛 American Institute of Physics 🌐 English ⚖ 682 KB