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Coupled electro-thermal simulation of MOSFETs

✍ Scribed by Chunjian Ni; Zlatan Aksamija; Jayathi Y. Murthy; Umberto Ravaioli

Book ID
113068358
Publisher
Springer
Year
2012
Tongue
English
Weight
924 KB
Volume
11
Category
Article
ISSN
1569-8025

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A methodology for the development of physics-based models of power semiconductor devices is presented. The separation of the device behaviour in its basic physical elements is the basis for the establishment of an electrical model. Semiconductor parameters are strongly dependent on temperature. A cl