๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Thermal breakdown simulation of Si MOSFET taking account of thermal interdependence

โœ Scribed by Hirobumi Kawashima; Ryo Dang

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
170 KB
Volume
82
Category
Article
ISSN
8756-663X

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

A comparative analysis of thermal gate o
A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs
โœ Sun-Ghil Lee; Young Pil Kim; Hye-Lan Lee; Beom Jun Jin; Jong-Wook Lee; Yu Gyun S ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 198 KB

Although the high mobility channel was formed with the strained Si layer on the fully relaxed Si 0.8 Ge 0.2 buffer layer, the mobility was severely attenuated with increasing the gate bias due to the degraded interface. The quality of oxide grown on strained Si was found to be worse than that for th