Thermal resistance evaluation in 3-D thermal simulation of MOSFET transistors
β Scribed by I. Hirsch; E. Berman; N. Haik
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 103 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0038-1101
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
A criterion for study of the thermal shock resistance of brittle materials is derived. It makes use of the stable extension stage of Vickers indentation cracks under the action of the thermal transient stress which appears during quenching. During this stage, the relative increase in crack length ca
The behaviours of parasitic bipolar transistors are investigated by exploring the physical mechanisms of negative resistance characteristics generated in a small-sized MOSFET structure. Physical experiments and three-dimensional simulations verify the expected negative resistance characteristics. Th
## Abstract For Abstract see ChemInform Abstract in Full Text.