𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Correlation of photoluminescence and electrical measurements in identifying contaminants in MBE-grown GaAs

✍ Scribed by J.M. Meese; P.E. Chumbley; F.A. Chambers; B.A. Vojak; G.W. Zajac

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
203 KB
Volume
2
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

✦ Synopsis

Data from photoluminescence peak heights are correlated with Hall and Capacitance-Voltage measurements to determine impurity compensation and specie concentrations in MBE-grown GaAs samples. Quantitative information is obtained and used to identify and subsequently reduce a source of significant carbon contamination.

πŸ“œ SIMILAR VOLUMES

Spin Lifetime Measurements in MBE-Grown
Spin Lifetime Measurements in MBE-Grown GaAs Epilayers
✍ J.S. Colton; T.A. Kennedy; A.S. Bracker; D. Gammon πŸ“‚ Article πŸ“… 2002 πŸ› John Wiley and Sons 🌐 English βš– 93 KB

Electron spin relaxation times in excess of the localized limit have been measured in MBE n-GaAs layers, with the times depending on the doping concentration. We have optically oriented the electrons in the samples, and measured spin lifetimes via luminescence depolarization in a transverse magnetic

Correlation of electrical conductivity a
Correlation of electrical conductivity and photoluminescence in nanoporous silicon
✍ M. BouaΓ―cha; M. Khardani; B. BessaΓ―s πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 157 KB

The effective electrical conductivity of p type porous silicon is determined both theoretically and experimentally for different porosities ranging from 30% to 80%. In this work, Effective Medium Approximation (EMA) model was used as a theoretical support. The porous silicon samples were prepared by