Correlation of material properties and recombination losses in Al0.2Ga0.8As solar cells

✍ Scribed by G.B. Lush; T.B. Stellwag; A. Keshavarzi; S. Venkatesan; M.R. Melloch; M.S. Lundstrom; R.F. Pierret; S.P. Tobin; S.M. Vernon

• Publisher: Elsevier Science
• Year: 1989
• Weight: 532 KB
• Volume: 27
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(89)90045-8

✦ Synopsis

To optimize the efficiency of A1GaAs solar cells intended for tandem cell applications, a detailed understanding of recombination losses and their relation to material quality and device design is essential. In this paper, recombination losses in A10nGao.sAs are characterized and the implications for high-efficiency cells are examined. Bulk and perimeter recombination in space-charge regions is characterized by dark I-V analysis, and recombination losses in quasi-neutral regions are studied by internal quantum efficiency measurements. Deep-level transient spectroscopy studies are then used to correlate the measured recombination losses to material quality. Finally, the estimated material parameters are used to assess the efficiencylimiting factors in present<lay A10.2Ga0.aAs solar cells.