Temperature dependence of the avalanche multiplication process and the impact ionization coefficients in Al0.8Ga0.2As

✍ Scribed by A.M. Barnett; J.E. Lees; D.J. Bassford; J.S. Ng; C.H. Tan; R.B. Gomes

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 260 KB
• Volume: 629
• Category: Article
• ISSN: 0168-9002
• DOI: 10.1016/j.nima.2010.11.114

✦ Synopsis

The temperature dependence of the avalanche multiplication process at soft X-ray energies in Al 0.8 Ga 0.2 As avalanche photodiodes (APDs) is investigated at temperatures from + 80 to À 20 1C. The temperature dependence of the pure electron initiated multiplication factor (M e ) and the mixed carrier initiated avalanche multiplication factor (M mix ) is experimentally measured. The experimental results are compared with a spectroscopic Monte Carlo model for Al 0.8 Ga 0.2 As diodes from which the temperature dependence of the pure hole initiated multiplication factor (M h ) is determined. The temperature dependences of the electron and hole ionization coefficients in Al 0.8 Ga 0.2 As are reported for the first time.