Zinc oxide (ZnO) thin films have been prepared by pulsed laser deposition (PLD) technique at room temperature on quartz and single crystal silicon (1 0 0) substrates. The oxygen ambient gas pressure was attained at 6 Torr during the deposition. The deposited films were post-growth annealed in air at
✦ LIBER ✦
Correlation between target–substrate distance and oxygen pressure in pulsed laser deposition of complex oxide thin films
✍ Scribed by R. Castro-Rodríguez; D. Reyes Coronado; A. Iribarren; B.E. Watts; F. Leccabue; J.L. Peña
- Publisher
- Springer
- Year
- 2005
- Tongue
- English
- Weight
- 487 KB
- Volume
- 81
- Category
- Article
- ISSN
- 1432-0630
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