Correction to "Hot-carrier degradation of the low-frequency noise in MOS transistors under analog and RF operating conditions"

✍ Scribed by Brederlow, R.; Weber, W.; Schmitt-Landsiedel, D.; Thewes, R.

• Book ID: 114616995
• Publisher: IEEE
• Year: 2002
• Tongue: English
• Weight: 170 KB
• Volume: 49
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2003.808739