Diffusion barrier materials, TiN and WN, were deposited by atomic layer deposition (ALD). The chlorine concentration of the TiN film was as low as 1.2 at.-%, and resistivity was below 200 lX cm. Ultra high aspect ratio (AR = 85) trenches were used to assess step coverage. Tungsten nitride film, depo
β¦ LIBER β¦
Copper Seed Layer Deposition by a New Liquid Precursor
β Scribed by Sang-Woo Kang; Yong-Hyeon Shin; Jin-Tae Kim; Ju-Young Yun; Yun-Hee Chang; Il-Doo Yang
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 476 KB
- Volume
- 17
- Category
- Article
- ISSN
- 0948-1907
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