β Scribed by S. Knack
No coin nor oath required. For personal study only.
The experimental work on copper and copper-related defects in silicon is reviewed. The paper focuses on the physics of defect reactions and the formation of complexes with other impurities in silicon. As a fast interstitial diffuser, copper is still mobile at and below room temperature and has the ability to form various defect complexes. It can also be trapped by a vacancy, becoming a substitutional defect and acting as an immobile trap for other impurities like hydrogen or interstitial copper. Various defect complexes including the Cu I Cu S pair, the M-center, the copper-sulfur center and the Pt-X defect are reviewed and interesting physical properties like metastabilities are highlighted.
π SIMILAR VOLUMES
Low intensity light ions (H + or He ++ ) irradiation of silicon introduced EPR Si-AA12 defect. Si-AA12 reveals close correlations with DLTS E1 ΒΌ E c Γ0.39 eV minority trap. Impurity interstitials or selfinterstitial associated secondary defects, such as interstitial carbon (C i ) or aluminum (Al i )
This paper concerns diffusion related properties of Cu in Ge and Si. In Ge, Cu prefers to occupy a substitutional lattice site whereas Cu in Si is mainly dissolved on an interstitial position. This difference in the lattice site occupancy is also reflected in the diffusion behaviour. Whereas Cu diff