Copper precipitates in silicon: Precipitation, dissolution, and chemical state
โ Scribed by McHugo, Scott A.; Mohammed, A.; Thompson, A. C.; Lai, B.; Cai, Z.
- Book ID
- 126463716
- Publisher
- American Institute of Physics
- Year
- 2002
- Tongue
- English
- Weight
- 949 KB
- Volume
- 91
- Category
- Article
- ISSN
- 0021-8979
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
## Abstract Mechanical polishing of silicon introduces considerable damage into the surface. Heating in air causes this damage to be annealed both by dislocation movement and by the formation of stacking faults. The dislocations are rearranged in planes parallel to the surface and stacking faults a
Institiit fur Festkorpcrphysik und Elcktroncnmikroskopie der Akadcmie dcr Tl'issonschaften der DDR, IIalle, und VEB Gleichrichterwcrlc Stahnsdorf ## Copper Precipitation in Longtime Diffused Silicon The generation of microdefects in FZ-silicon during long-time high-temperature processing, necessa