Copper precipitates in silicon-observation of electrical effect
β Scribed by Hu, S. M. ;Poponiak, M. R.
- Publisher
- John Wiley and Sons
- Year
- 1973
- Tongue
- English
- Weight
- 236 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
## Abstract The effect of vacancies induced by the prior rapid thermal processing (RTP) at 900β1200 Β°C in Ar on copper (Cu) precipitation in nβtype silicon has been investigated by means of optical microscopy and transmission electron microscopy. It was revealed that in the sample without the prior
Institiit fur Festkorpcrphysik und Elcktroncnmikroskopie der Akadcmie dcr Tl'issonschaften der DDR, IIalle, und VEB Gleichrichterwcrlc Stahnsdorf ## Copper Precipitation in Longtime Diffused Silicon The generation of microdefects in FZ-silicon during long-time high-temperature processing, necessa