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Controlling the quality of nanocrystalline silicon made by hot-wire chemical vapor deposition by using a reverse H2 profiling technique

✍ Scribed by H. Li; R.H. Franken; R.L. Stolk; C.H.M. van der Werf; J.K. Rath; R.E.I. Schropp

Book ID
116671001
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
288 KB
Volume
354
Category
Article
ISSN
0022-3093

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We report on the effects of deposition pressure P d on the growth and properties of the B-doped nanocrystalline silicon (nc-Si:H) thin films grown by hot-wire chemical vapor deposition (HWCVD) at very high hydrogen dilution of 98.8%. We found that the crystallinity of nc-Si:H or mc-Si:H films is not